• DocumentCode
    3553506
  • Title

    A versatile, ion implanted bipolar transistor

  • Author

    Scavuzzo, R.J. ; Payne, R.S. ; Olson, K.H. ; Nacci, J.M. ; Moline, R.A.

  • Author_Institution
    Bell Laboratories, Allentown, Pennsylvania
  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    58
  • Lastpage
    58
  • Abstract
    This paper describes the physical properties of arsenic and boron implanted silicon which have enabled bipolar transistors with hFEfrom 20 to > 1000 and with fTfrom 1.5 GHz to 7.7 GHz to be made. The process, which is capable of producing extremely uniform distributions of electrical parameters (e.g., hFE112 ± 1.2) is clearly extendable to a broad distribution of possible doping profiles and hence device characteristics.
  • Keywords
    Bipolar transistors; Boron; Design engineering; Doping profiles; Frequency; Optical noise; Protons; Silicon; Tail; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249288
  • Filename
    1477111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553506