• DocumentCode
    3553507
  • Title

    Guard-ring isolated monolithic integrated circuits (GIMIC); a simple ion implanted bipolar structure

  • Author

    Agraz-Guerena, J. ; Payne, R.S.

  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    60
  • Lastpage
    60
  • Abstract
    The advantages of the collector-diffusion-isolated (CDI) bipolar device structure compared to the standard-buried (SBC) structure are improved packing density and process simplicity. Disadvantages of CDI, which have limited its range of application, are low BVCBO, high CCB, and an unavailability of Schottky diodes. Additionally, the electrical properties and yield are first order functions of the control of the (1) intrinsic base doping (hFE, VBE), and (2) extrinsic base doping (resistors).
  • Keywords
    Boron; Conductivity; Doping; Epitaxial layers; Ion implantation; Large scale integration; Monolithic integrated circuits; Parasitic capacitance; Resistors; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249289
  • Filename
    1477112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553507