Title :
Fabrication and performance of GaAs millimeter-wave impatts
Author :
Weller, K.P. ; Dreeben, A.B. ; Jolly, S.T. ; Davis, H.L.
Author_Institution :
RCA Laboratories, Princeton, New Jersey
Abstract :
A recently developed procedure, incorporating both preferential electrolytic etching for wafer thinning and electroplating for formation of a heat sink has been applied to the fabrication of Ka-band (26.5-40 GHz) GaAs IMPATTS. The technique is an extension of the work recently reported on 50-60 GHz silicon diodes. Both epitaxially-grown GaAs-pn juction and Schottky barrier (Pt and Cr) diodes have been fabricated. Uniform GaAs structures as thin as 4µm have been produced on plated Cu and Au supports.
Keywords :
Chromium; Etching; Fabrication; Gallium arsenide; Gold; Heat sinks; Millimeter wave technology; Schottky barriers; Schottky diodes; Silicon;
Conference_Titel :
Electron Devices Meeting, 1972 International
DOI :
10.1109/IEDM.1972.249311
