One and two-dimensional analysis of collector behaviour, including high level effects, in planar, transistors

A complete set of new one-dimensional analytical models is derived, which describes the collector behaviour for all possible combinations of current and voltage. The influence, not only of ohmic and hot carriers, but also of tepid carriers is fully taken into account. These models, whose validity ranges all link up exactly are very accurate in spite of their simplicity, as is shown by rigorous one-dimensional numerical computations. This set of models leads to a division of the (Ic, Vcb) plane into injection, depletion and scattering-limited drift velocity (SLDV) areas. The product of collector doping and epilayer width (Nc.W) turns out to be of decisive importance for the details of such a division. This product also influences the hFE-- and fT-fall-off and the cross-modulation behaviour.