DocumentCode
3553587
Title
A low impedance field effect transistor
Author
Nishizawa, J. ; Terasaki, T.
Author_Institution
Tohoku University, Sendai, Japan
Volume
18
fYear
1972
fDate
1972
Firstpage
144
Lastpage
144
Abstract
A junction field effect transistor having non-saturation characteristics like a vacuum tride has been successfully developed. Its output impedance can be decreased to 8 ohms so that it will serve in audio applications or as an impedance transformer. The geometrical structure of this FET is analogous to that of a triode tube and is based on the idea of controlling the resistance between drain and source by a potential applied to a grid-like gate structure. Design considerations that avoid saturation of the drain current will be discussed.
Keywords
Circuit faults; Conductivity; Electrodes; FETs; Frequency; Impedance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Type
conf
DOI
10.1109/IEDM.1972.249362
Filename
1477185
Link To Document