• DocumentCode
    3553587
  • Title

    A low impedance field effect transistor

  • Author

    Nishizawa, J. ; Terasaki, T.

  • Author_Institution
    Tohoku University, Sendai, Japan
  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    144
  • Lastpage
    144
  • Abstract
    A junction field effect transistor having non-saturation characteristics like a vacuum tride has been successfully developed. Its output impedance can be decreased to 8 ohms so that it will serve in audio applications or as an impedance transformer. The geometrical structure of this FET is analogous to that of a triode tube and is based on the idea of controlling the resistance between drain and source by a potential applied to a grid-like gate structure. Design considerations that avoid saturation of the drain current will be discussed.
  • Keywords
    Circuit faults; Conductivity; Electrodes; FETs; Frequency; Impedance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249362
  • Filename
    1477185