DocumentCode :
3553602
Title :
A single-transverse-mode GaAs laser device
Author :
Philipp-Rutz, Elisabeth M.
Author_Institution :
IBM Corporation, Gaithersburg, Md.
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
160
Lastpage :
160
Abstract :
A high radiance GaAs laser operating at room temperature, has been developed under contract to the National Aeronautics and Space Administration for use in an optical space navigation system. To achieve high radiance a single, 300 microns wide, GaAs diode is confined to the lowest-order transverse mode. This is accomplished by operating the laser diode with its mirror faces anti-reflection coated in an optical cavity in which the transverse mode is controlled by an aperture limiting slit. The asymmetry and small size of the active region and the very low impedance of the GaAs laser diode presented serious problems in designing a rugged and efficient device.
Keywords :
Apertures; Contracts; Diode lasers; Gallium arsenide; Impedance; Laser modes; Mirrors; Navigation; Optical control; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249376
Filename :
1477199
Link To Document :
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