Title :
"Junction field effect transistor with the lower gate formed by a 3.5 MeV boron ion implantation"
Author :
Colman, D. ; Stephen, Jose
Keywords :
Boron; Displays; Electric variables; Epitaxial layers; FETs; Impurities; Ion implantation; Leakage current; Microwave devices; Microwave transistors;
Conference_Titel :
Electron Devices Meeting, 1972 International
DOI :
10.1109/IEDM.1972.249232
