Title :
Large blue shift due to band filling at interface islands in coupled quantum wells
Author :
Cui, A.G. ; Gorbounova, O. ; Ding, Yujie J. ; Veliadis, J.V.D. ; Lee, S.J. ; Khurgin, Jacob B. ; Wang, K.L.
Author_Institution :
Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA
Abstract :
Recently we have observed band filling of the exciton states at interface islands in multiple QWs. This occurs at the spatially localized islands because of the spatial confinement of the excitons along the interface. Here we report our experimental observation of enhanced band-filling effect at interface islands in a strongly coupled two-QW sample based on continuous-wave photoluminescence excitation (PLE) measurements. The sample was grown by molecular beam epitaxy on a semi-insulating AlAs substrate. Each unit of 20 periods is composed of two GaAs QWs separated by AlGaAs barrier.
Keywords :
III-V semiconductors; excitons; gallium arsenide; molecular beam epitaxial growth; optical harmonic generation; photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line shift; AlAs; AlGaAs; AlGaAs barrier; GaAs; GaAs QWs; band filling; continuous-wave photoluminescence excitation; coupled quantum wells; enhanced band-filling effect; exciton states; excitons; interface islands; large blue shift; molecular beam epitaxy; multiple QWs; nonlinear optics; semi-insulating AlAs substrate; spatial confinement; spatially localized islands; strongly coupled two-QW sample; Absorption; Astronomy; Excitons; Filling; Laser theory; Optical saturation; Physics; Quantum well lasers; Solids; Temperature;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
