Measurement of the second-order susceptibility of GaInP films at 1.5 /spl mu/m

Author

Ueno, Yukiko ; Stegeman, G.I.

fYear

1996

fDate

7-7 June 1996

Firstpage

21

Lastpage

22

Abstract

Nonlinear second order susceptibility materials are attracting new attention for ultrafast all-optical switches based on the second order cascading mechanism. Recent experiments and analysis have shown the potential of cascading to decrease the switching energy down to a practical level. Here we report measurements of the second order susceptibility in GaInP films. The key feature is the difference between the matrices for ordered and disordered GaInP.

Keywords

III-V semiconductors; electro-optical switches; gallium compounds; indium compounds; nonlinear optical susceptibility; nonlinear optics; optical films; semiconductor thin films; GaInP; GaInP films; disordered GaInP; nonlinear second order susceptibility materials; ordered GaInP; second order cascading mechanism; second-order susceptibility measurements; switching energy; ultrafast all-optical switches; Absorption; Conducting materials; Diffraction; Gain measurement; Gallium arsenide; Optimized production technology; Spontaneous emission; Substrates; Switches; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865517