• DocumentCode
    3553700
  • Title

    Staggered oxide C4D structure with clocked source repeater

  • Author

    Tchon, W.E. ; Huang, J.S.T. ; Huang, J.S.T.

  • Author_Institution
    Honeywell Information Systems Inc., Phoenix, Arizona
  • Volume
    19
  • fYear
    1973
  • fDate
    1973
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    CCDs show promise for high density serial storage. A novel 2-phase C4D shift register is described in which the charge storage barrier is produced by a staggered oxide structure
  • Keywords
    Aluminum; Annealing; Charge coupled devices; Clocks; Etching; Information systems; Repeaters; Shift registers; Silicon; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188638
  • Filename
    1477515
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553700