Thermal response measurements for semiconductor device die attachment evaluation

This paper discusses an improved technique, based on transient thermal response measurements, to non-destructively evaluate die attachment in semiconductor devices. The technique was confirmed with studies performed on diodes bonded to TO-5 headers and transistors bonded to both TO-5 and TO-66 headers with voids intentionally incorporated into the die attachment. The advantages of using the transient thermal response technique for screening semiconductor devices for poor die attachment are emphasized.