Title :
Threshold voltage controllability in double diffused-MOS transistors
Author :
Pocha, M.D. ; Gonzalez, A.G. ; Dutton, R.W.
Author_Institution :
Stanford University, Stanford, California
Abstract :
Processing dependencies of D-MOS threshold voltage are described in this paper. An efficient mini-computer program was written to calculate doping profiles based on processing parameters. D-MOS structures were fabricated to determine empirical program parameters. Using computer simulation the threshold dependencies on boron predeposition and channel length, the two most sensitive processing parameters, were studied.
Keywords :
Bandwidth; Boron; Circuits and systems; Computer simulation; Controllability; Doping profiles; Equations; Fabrication; Impurities; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188650
