Title :
Charge storage junction field-effect transistor
Author_Institution :
Sony Corporation Research Center, Yokohama, Japan
Abstract :
A new floating-gate junction FET has been developed for various applications as a light-sensor, an analog memory and a time-delay unit. This device is integrable in conventional bipolar ICs and is useful in time-related circuits which otherwise require large capacitors.
Keywords :
Analog memory; Capacitors; Circuits; FETs; Leakage current; Lighting; Nonvolatile memory; Sensor phenomena and characterization; Temperature dependence; Voltage;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188651
