DocumentCode
3553730
Title
The drain-source protected MNOS memory device and memory endurance
Author
Cricchi, J.R. ; Blaha, F.C. ; Fitzpatrick, M.D.
Author_Institution
Westinghouse Electric Corporation, Baltimore, Maryland
Volume
19
fYear
1973
fDate
1973
Firstpage
126
Lastpage
129
Keywords
Circuits; Digital signal processing; Intrusion detection; Laboratories; Large scale integration; Protection; Random access memory; Tunneling; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188665
Filename
1477542
Link To Document