DocumentCode :
3553789
Title :
Efficient laser diodes of InxGa1-xAs for 1.06 µm emission
Author :
Nuese, C.J. ; Ettenberg, M. ; Enstrom, R.E. ; Kressel, H.
Author_Institution :
RCA Laboratories, Princeton, New Jersey
fYear :
1973
fDate :
3-5 Dec. 1973
Firstpage :
320
Lastpage :
323
Abstract :
Inx Ga1-x As vapor-grown laser diodes that are capable of providing pulsed operation at 300°K and continuous-wave (c-w) operation at 77°K have been prepared for 1.06 µm emission. From this material, we have obtained 64 mW of c-w radiation from a single laser diode, and more than 20 W (peak power) from a pulsed, 12-element laser array at 77°K. At room temperature, threshold current densities of 
A/cm2have been achieved with homojunction lasers emitting at 1.145 µm.
A/cm2have been achieved with homojunction lasers emitting at 1.145 µm.Keywords :
Diode lasers; Fiber lasers; Gallium arsenide; Laboratories; Optical materials; Optical pulses; Power lasers; Pulsed laser deposition; Semiconductor laser arrays; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1973.188719
Filename :
1477596
Link To Document :
