• DocumentCode
    3553789
  • Title

    Efficient laser diodes of InxGa1-xAs for 1.06 µm emission

  • Author

    Nuese, C.J. ; Ettenberg, M. ; Enstrom, R.E. ; Kressel, H.

  • Author_Institution
    RCA Laboratories, Princeton, New Jersey
  • fYear
    1973
  • fDate
    3-5 Dec. 1973
  • Firstpage
    320
  • Lastpage
    323
  • Abstract
    InxGa1-xAs vapor-grown laser diodes that are capable of providing pulsed operation at 300°K and continuous-wave (c-w) operation at 77°K have been prepared for 1.06 µm emission. From this material, we have obtained 64 mW of c-w radiation from a single laser diode, and more than 20 W (peak power) from a pulsed, 12-element laser array at 77°K. At room temperature, threshold current densities of 7 \\times 10^{4} A/cm2have been achieved with homojunction lasers emitting at 1.145 µm.
  • Keywords
    Diode lasers; Fiber lasers; Gallium arsenide; Laboratories; Optical materials; Optical pulses; Power lasers; Pulsed laser deposition; Semiconductor laser arrays; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188719
  • Filename
    1477596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553789