Exact modeling of time-dependent phenomena in an MOS structure

The main thrust of this work was to develop new numerical methods to obtain viable solutions for the exact set of time-dependent equations that govern the dynamics of a metal-insulator-semiconductor system, Techniques were developed which resulted in self-consistent solutions over many orders of magnitude of time for the system of equations that describes the dynamics of electrons, holes, electrostatic potential and Shockley-Read-Hall trap, centers for the MIS device. The transient theory of the MOS capacitor has been attacked in depth. Several key results were obtained and these are compared to results obtained from existing theory.