DocumentCode :
3553809
Title :
Characteristics of high performance microwave transistors fabricated by ion implantation
Author :
Sigmon, T.W.
Author_Institution :
Hewlett Packard Laboratories, Palo Alto, California
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
387
Lastpage :
389
Abstract :
In this paper the characteristics and fabrication of implanted microwave transistors are discussed. By use of arsenic implanted emitter and boron implanted base, devices can be fabricated with fT between 4.0 and 7.0 GHz, while fmax ranges from 18.0 to 25.5 GHz. Noise figures range from 3.8 to 5.5 db at 4 GHz. Results will be presented from devices implanted with arsenio emitter energies from 27 to 30 KeV and boron base energies from 20 to 38 KeV. Boron base doses range from 
to 1013B/cm2, while emitter dose was 
to 
As/cm2. It was found that (QE /DE )eff ranged from 
cm-4sec for all emitter implants. A discussion of improvement of uniformity and yield is included along with some wafer yield data.
to 1013B/cm2, while emitter dose was to As/cm2. It was found that (Q cm-4sec for all emitter implants. A discussion of improvement of uniformity and yield is included along with some wafer yield data.Keywords :
Annealing; Boron; Fabrication; Implants; Ion implantation; Metallization; Microwave devices; Microwave transistors; Noise figure; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188736
Filename :
1477613
Link To Document :
