• DocumentCode
    3553844
  • Title

    KA-Band IMPATT diode reliability

  • Author

    Staecker, Peter

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, Massachusetts
  • Volume
    19
  • fYear
    1973
  • fDate
    1973
  • Firstpage
    493
  • Lastpage
    496
  • Abstract
    Constant stress (temperature) operating tests have been conducted on silicon Ka-band diodes. Statistics of failure fit a lognormal distribution except near the early-failure tail; deviations are ascribed to manufacturing process non-uniformities. Analysis of failed devices shows a single predominant failure mechanism, gold contamination of the p-n junction area, observable at junction operating temperatures between 230°C and 350°C.
  • Keywords
    Diodes; Failure analysis; Manufacturing processes; P-n junctions; Probability distribution; Silicon; Statistical distributions; Stress; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188768
  • Filename
    1477645
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553844