Title :
The effects of doping profile, material parameters and operating conditions on the noise properties of IMPATT devices
Author :
Chao, C. ; Haddad, G.I.
Author_Institution :
The University of Michigan, Ann Arbor, Michigan
Abstract :
The dependence of avalanche noise on the device structure, junction curvature, operating conditions and material parameters is studied systematically. AM and FM noise of oscillators and optimum noise measure of stable amplifiers under high-power conditions as functions of RF power, dc current density, frequency and avalanche region width are presented.
Keywords :
Current measurement; Density measurement; Doping profiles; Frequency measurement; High power amplifiers; Noise measurement; Oscillators; Power measurement; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188769
