DocumentCode :
3553847
Title :
High power EBS diode studies
Author :
Harris, F.H. ; Pankey, T., Jr. ; Thomas, R.E. ; Haas, G.A.
Author_Institution :
Naval Research Lab., Washington, D. C.
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
509
Lastpage :
511
Abstract :
Recent studies of large area EBS diodes for use in a 1 kW 500 MHz CW application are given. Power dissipation of 55 watts CW on a 4 mm2diode has been obtained in excess of 1000 hours with no degradation in reverse voltage characteristics. At higher diode dissipation, current runaway was observed, and this was shown to be a function of the power dissipated in the diode, independent of diode voltage and current over a 100% change in diode voltage and current. The maximum diode dissipation has been related to voids in the braze to the heat sink. Diodes with void-free bonds have shown dissipation levels in excess of 100 watts CW but were limited by degassing problems in the tube. Failure with some void-free bonded EBS diodes was related to breakdown of small ( 
µm) high conductive regions of the diodes observed with a Scanning Electron Microscope. Auger surface analysis has traced this to a possible residual phosphorus contamination on the top p layer due to removal of excess Al metallization during fabrication.
µm) high conductive regions of the diodes observed with a Scanning Electron Microscope. Auger surface analysis has traced this to a possible residual phosphorus contamination on the top p layer due to removal of excess Al metallization during fabrication.Keywords :
Bonding; Degradation; Diodes; Electric breakdown; Heat sinks; Metallization; Power dissipation; Scanning electron microscopy; Surface contamination; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188771
Filename :
1477648
Link To Document :
