A high power MOSFET with a vertical drain electrode and meshed gate structure

A power MOSFET is developed which exhibits 20A current, 3000mΩ transconductance and 85V breakdown voltage in a 5×5mm²chip. The features of the device structure are a vertical drain electrode which enables to use most of the surface area for the source electrode and a mesh gate structure which makes able to increase the channel width per unit area, thereby drain current of the device can be increased. The P-channel device with an offset gate structure was fabricated from an N on P⁺epitaxial wafer by using the polysilicon gate and the ion implantation processes. The device can be operated stably at ambient temperatures up to 180°C.