DocumentCode
3553967
Title
Use of platinum for lifetime control in power devices
Author
Miller, M.D. ; Schade, H. ; Nuese, C.J.
Author_Institution
RCA Laboratories, Princeton, New Jersey
Volume
21
fYear
1975
fDate
1975
Firstpage
180
Lastpage
183
Abstract
The diffusion of Pt into Si at temperatures between 800 and 1000°C has been found to provide room-temperature minority-carrier lifetimes between 1 µsec and 10 nsec. Evaluation of the dependence of lifetime on ambient temperature and on majority carrier doping as well as the measurement of thermally stimulated currents indicate the presence of two recombination centers: an acceptor located 0.26 eV below the conduction band edge for n-type Si and a donor located 0.32 eV above the valence band edge for p-type Si.
Keywords
Charge measurement; Conductivity; Current measurement; Doping; Gold; Impurities; Platinum; Silicon; Temperature control; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188854
Filename
1478215
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