DocumentCode :
3553968
Title :
Be implanted GaAs1-x Px light emitting diodes
Author :
Chatterjee, Pallab K. ; Streetman, B.G. ; Keune, D.L. ; Herzog, A.H.
Author_Institution :
University of Illinois at Urbana-Champaign
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
187
Lastpage :
191
Abstract :
Red light emitting diodes (6610 Å at 300°K) have been fabricated in GaAS1-x Px ( 
%) by implanting Be at multiple energies chosen to produce a uniform Be profile with a junction depth of about 1 µm. Low temperature photoluminescence and sheet resistivity measurements indicate that annealing the Be implanted GaAs0.62 P0.38 for 1 hour at 900°C with Si3 N4 encapsulation reorders the lattice and activates the implanted Be. The Be related luminescence is not observed after about 1.3 µm is removed from the surface, suggesting that there is no significant diffusion of the implanted Be during anneal. From electroluminescence and photoluminescence data the Be acceptor level is estimated to be 20.2 ± 2 meV above the valence band. The red LED\´s exhibit an external quantum efficiency of 
.
%) by implanting Be at multiple energies chosen to produce a uniform Be profile with a junction depth of about 1 µm. Low temperature photoluminescence and sheet resistivity measurements indicate that annealing the Be implanted GaAs .Keywords :
Annealing; Conductivity measurement; Electroluminescence; Encapsulation; Gallium arsenide; Lattices; Light emitting diodes; Luminescence; Photoluminescence; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Type :
conf
DOI :
10.1109/IEDM.1975.188855
Filename :
1478216
Link To Document :
