DocumentCode
3553975
Title
Studies of M-I-S type solar cells fabricated on silicon
Author
Shevenock, Steven ; Fonash, Stephen ; Geneczko, Jeannie
Author_Institution
Pennsylvania State University, University Park, Pennsylvania
Volume
21
fYear
1975
fDate
1975
Firstpage
211
Lastpage
212
Abstract
Metal-insulator-semiconductor solar cells have been studied on silicon. The emphasis in this report is on M-I-S cells fabricated on n-type silicon. Results for M-S cells on this material have been poor to-date with efficiencies of only about 2% having been achieved at open circuit voltages of 0.250 volts. Using M-I-S cells on n-type silicon efficiencies of almost 9% have been obtained at open circuit voltages of better than 0.4 volts. Increase in the short circuit current has also been seen.
Keywords
Coatings; Etching; Gold; Metal-insulator structures; Photovoltaic cells; Photovoltaic systems; Short circuit currents; Silicon; Solar power generation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188861
Filename
1478222
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