Author :
Cook, Bob ; McNally, Shawn H. ; San, Aung
Author_Institution :
ITT Semiconductors, West Palm Beach, Florida
Abstract :
Present I2L devices are limited in usable speed and current gain by the low performance of the inverse NPN transistor made with conventional bipolar processes. This report discusses new I2L structure variations that overcome these limitations. In addition, a new process is described where the intended isolation regions are anodized to form a conduction barrier. This new I2L II Process has already yielded NPN transistors with hFE= 250 and fT= 250MHz and is expected to extend I2L further into the high end of the speed power curve with fT> 500MHz and propagation delays of 5ns.
Keywords :
Bipolar transistors; Boron; Breakdown voltage; Conductivity; Impurities; Iron; Performance gain; Process control; Propagation delay; Silicon;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188880
