DocumentCode
3553998
Title
A p-channel Si-gate integrated circuit technology
Author
Clemens, J.T. ; Mowery, G.L. ; Doklan, R.H. ; Nolen, J.J. ; Drobek, J.
Author_Institution
Bell Telephone Laboratories, Incorporated Allentown, Pennsylvania
Volume
21
fYear
1975
fDate
1975
Firstpage
291
Lastpage
294
Abstract
A general purpose p-channel Si-Gate MOS technology has been developed and characterized. The technology uses local oxidation and contains: (a) a -1.0 volt enhancement mode MOSFET, (b) a process-variable threshold voltage depletion mode MOSFET, and (c) an n/p/n process-variable gain bipolar output device. Application of the technology to beam leaded high voltage RAM circuits has created a family of special memory products for use within the Bell System. Additionally, by making use of the depletion mode MOSFET and the bipolar output device, high speed, low voltage (5 volt) TTL compatible logic circuits are realized.
Keywords
Boron; Etching; Glass; Integrated circuit technology; MOSFET circuits; Metallization; Resists; Silicon; Substrates; Windows;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188882
Filename
1478243
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