Title :
A p-channel Si-gate integrated circuit technology
Author :
Clemens, J.T. ; Mowery, G.L. ; Doklan, R.H. ; Nolen, J.J. ; Drobek, J.
Author_Institution :
Bell Telephone Laboratories, Incorporated Allentown, Pennsylvania
Abstract :
A general purpose p-channel Si-Gate MOS technology has been developed and characterized. The technology uses local oxidation and contains: (a) a -1.0 volt enhancement mode MOSFET, (b) a process-variable threshold voltage depletion mode MOSFET, and (c) an n/p/n process-variable gain bipolar output device. Application of the technology to beam leaded high voltage RAM circuits has created a family of special memory products for use within the Bell System. Additionally, by making use of the depletion mode MOSFET and the bipolar output device, high speed, low voltage (5 volt) TTL compatible logic circuits are realized.
Keywords :
Boron; Etching; Glass; Integrated circuit technology; MOSFET circuits; Metallization; Resists; Silicon; Substrates; Windows;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188882
