• DocumentCode
    3553999
  • Title

    A new n-channel Si-gate technology for high packing density, high-speed MOS LSI

  • Author

    Kubota, N. ; Shibata, T. ; Ohuchi, K. ; Hirabayashi, K. ; Horiuchi, S.

  • Author_Institution
    Tokyo Shibaura Electric Co., Ltd., Kawasaki, JAPAN
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    295
  • Lastpage
    298
  • Abstract
    A newly developed n-channel Si-gate technology, "Gate Oxidation Method" (G.O.M.), uses high resistivity substrates (20Ω.cm) and only one boron ion implantation process. The E-mode transistor threshold voltage is controlled by the lost boron ions into the growing gate oxide.
  • Keywords
    Boron; Circuit testing; Conductivity; Ion implantation; Large scale integration; Oxidation; Silicon; Substrates; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188883
  • Filename
    1478244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553999