Title :
A new n-channel Si-gate technology for high packing density, high-speed MOS LSI
Author :
Kubota, N. ; Shibata, T. ; Ohuchi, K. ; Hirabayashi, K. ; Horiuchi, S.
Author_Institution :
Tokyo Shibaura Electric Co., Ltd., Kawasaki, JAPAN
Abstract :
A newly developed n-channel Si-gate technology, "Gate Oxidation Method" (G.O.M.), uses high resistivity substrates (20Ω.cm) and only one boron ion implantation process. The E-mode transistor threshold voltage is controlled by the lost boron ions into the growing gate oxide.
Keywords :
Boron; Circuit testing; Conductivity; Ion implantation; Large scale integration; Oxidation; Silicon; Substrates; Temperature; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188883
