DocumentCode
3554001
Title
BEAMOS - A new electron beam digital memory device
Author
Possin, G.E. ; Hughes, W.C. ; Parks, H.G. ; Ellis, G.W. ; Wilson, R.H. ; Lemmond, C.Q. ; Kirkpatrick, C.G.
Author_Institution
General Electric Company, Schenectady, New York
fYear
1975
fDate
1-3 Dec. 1975
Firstpage
305
Lastpage
308
Abstract
BEAMOS, for Beam Addressed Metal Oxide Semiconductor, is a new technology for auxiliary memories based on an electron beam which reads and writes data on a simple unstructured MOS chip. Its performance features include large bit capacity (> 
bits/module), rapid access time (<30 microseconds), high data transfer rates, nonvolatile storage and low cost in comparison with memories of comparable performance. The memory component is rugged, all electronic, and relatively insensitive to temperature and vibration, making it especially attractive for military applications. Its fast access time should provide considerable performance improvement in both commercial and military computer systems.
bits/module), rapid access time (<30 microseconds), high data transfer rates, nonvolatile storage and low cost in comparison with memories of comparable performance. The memory component is rugged, all electronic, and relatively insensitive to temperature and vibration, making it especially attractive for military applications. Its fast access time should provide considerable performance improvement in both commercial and military computer systems.Keywords
Capacitance; Charge carrier processes; Circuits; Diodes; Electron beams; Frequency response; Lenses; Silicon compounds; Spontaneous emission; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Conference_Location
Washigton, DC, USA
Type
conf
DOI
10.1109/IEDM.1975.188885
Filename
1478246
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