DocumentCode :
3554001
Title :
BEAMOS - A new electron beam digital memory device
Author :
Possin, G.E. ; Hughes, W.C. ; Parks, H.G. ; Ellis, G.W. ; Wilson, R.H. ; Lemmond, C.Q. ; Kirkpatrick, C.G.
Author_Institution :
General Electric Company, Schenectady, New York
fYear :
1975
fDate :
1-3 Dec. 1975
Firstpage :
305
Lastpage :
308
Abstract :
BEAMOS, for Beam Addressed Metal Oxide Semiconductor, is a new technology for auxiliary memories based on an electron beam which reads and writes data on a simple unstructured MOS chip. Its performance features include large bit capacity (> 
bits/module), rapid access time (<30 microseconds), high data transfer rates, nonvolatile storage and low cost in comparison with memories of comparable performance. The memory component is rugged, all electronic, and relatively insensitive to temperature and vibration, making it especially attractive for military applications. Its fast access time should provide considerable performance improvement in both commercial and military computer systems.
bits/module), rapid access time (<30 microseconds), high data transfer rates, nonvolatile storage and low cost in comparison with memories of comparable performance. The memory component is rugged, all electronic, and relatively insensitive to temperature and vibration, making it especially attractive for military applications. Its fast access time should provide considerable performance improvement in both commercial and military computer systems.Keywords :
Capacitance; Charge carrier processes; Circuits; Diodes; Electron beams; Frequency response; Lenses; Silicon compounds; Spontaneous emission; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Conference_Location :
Washigton, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1975.188885
Filename :
1478246
Link To Document :
