Title :
Gigabit rate Gunn-effect shift register
Author :
Yanagisawa, S. ; Wada, O. ; Takanashi, H.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
In this paper, the practical circuit configuration of the dynamic shift register utilizing the Gunn domain is proposed and in order to demonstrate its utility, two stage shift register with the clock rate of 1.6 GHz was fabricated as a monolithically integrated circuit on an epitaxial GaAs. The improved fabrication technique was used to obtain the experimental circuit. The successful operation was confirmed under DC biased condition.
Keywords :
Circuits; Clocks; Doping; Etching; Fabrication; Gunn devices; Resistors; Shift registers; Substrates; Timing;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188888
