DocumentCode
3554004
Title
Gigabit rate Gunn-effect shift register
Author
Yanagisawa, S. ; Wada, O. ; Takanashi, H.
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
21
fYear
1975
fDate
1975
Firstpage
317
Lastpage
319
Abstract
In this paper, the practical circuit configuration of the dynamic shift register utilizing the Gunn domain is proposed and in order to demonstrate its utility, two stage shift register with the clock rate of 1.6 GHz was fabricated as a monolithically integrated circuit on an epitaxial GaAs. The improved fabrication technique was used to obtain the experimental circuit. The successful operation was confirmed under DC biased condition.
Keywords
Circuits; Clocks; Doping; Etching; Fabrication; Gunn devices; Resistors; Shift registers; Substrates; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188888
Filename
1478249
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