Rigorous numerical analysis of a planar thyristor

A one-dimensional solution for the distribution of carriers and potential within a planar thyristor will be given. The analysis uses dimensions and physical data obtained from actual device structures. The simulation includes SRH- and Auger recombination mechanisms and Avalanche multiplication as well as mobility saturation effects. The relations between the various internal mechanisms and the different regions of the transfer characteristic are identified. This correlation is required for technological optimization of device performance.