Zener and avalanche breakdown in As-implanted, low-voltage Si n-p junctions

Implanted-diffused As layers in Si have been well-characterized, and have been used in fabricating low-voltage n-p junctions. It is shown that these As layers form linearly-graded junctions with a uniform B-doped background ( - cm). Further, the grade constant of the As profile at the junction is known sufficiently well as a function of As dose, diffusion time and temperature to allow quantitative use of existing tunneling and avalanche theories for the calculation of the reverse I-V curves. Calculated curves are presented which correlate As implant dose and diffusion with junction breakdown voltage, breakdown impedance and temperature coefficient of reverse voltage.