DocumentCode :
3554048
Title :
Linearity of high-power, high-radiance GaxAl1-xAs:Ge double heterostructure LED´s
Author :
Straus, J. ; Szentesi, O.I.
Author_Institution :
Bell-Northern Research, Ottawa, Ontario
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
484
Lastpage :
486
Abstract :
Distortion measurements on a series of Burrus type germanium-doped GaAlAs double-heterostructure LED´s indicate that in the investigated doping range the overall shape of the total harmonic distortion (THD) versus dc bias curve is relatively insensitive to the amount of dopant present either in the active or second confining layers. The THD figures measured at 1 KHz with 100 mA dc bias and 36 mA peak-to-peak modulation currents were in the range of 42 to 44 dB down on the fundamental. The results of temperature measurements show that with increasing temperature the THD increases; at 100mA dc bias, the increase is linear with a slope of approximately 0.06 dB/°C.
Keywords :
Current measurement; Distortion measurement; Doping; Light emitting diodes; Linearity; Optical design; Optical fiber communication; Shape measurement; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Type :
conf
DOI :
10.1109/IEDM.1975.188928
Filename :
1478289
Link To Document :
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