DocumentCode :
3554050
Title :
Very low threshold double heterojunction laser diodes of (AlGa)As
Author :
Ettenberg, M. ; Kressel, H.
Author_Institution :
RCA Laboratories, Princeton, New Jersey
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
487
Lastpage :
489
Abstract :
This paper describes the characteristics of double-heterojunction GaAs/(AlGa)As laser diodes with the lowest room temperature threshold current density (475 A/cm2) yet reported and a very small temperature sensitivity. The CW output from such lasers is only halved between 22 and 80°C at constant current.
Keywords :
DH-HEMTs; Diode lasers; Gallium arsenide; Heterojunctions; Radiative recombination; Temperature dependence; Temperature sensors; Thermal resistance; Threshold current; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Type :
conf
DOI :
10.1109/IEDM.1975.188929
Filename :
1478290
Link To Document :
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