DocumentCode
3554051
Title
A new sulfur diffused stripe-geometry DH laser
Author
Takusagawa, M. ; Nishi, H. ; Osaka, S. ; Morimoto, M. ; Imai, H. ; Takanashi, H. ; Misugi, T.
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
21
fYear
1975
fDate
1975
Firstpage
490
Lastpage
493
Abstract
A new type of internally striped planar (ISP) DH lasers is developed with using a new Sulfur selective diffusion technique. The increase of the threshold ratio with the narrowing of the stripe width is more gentle for stripe width range near 10 µm in the laser than in both Zn-diffused planar and proton-bombardment stripe-geometry lasers. Single transverse mode operation with nearly constant width is confirmed up to 100 °C and up to three times of a threshold. Room-temperature CW lasers stably operate over more than 3000 hours. Any deterioration of laser characteristics caused by S atom and its diffusion process is not observed. Sulfur selective diffusion is one of most promising technique for long life lasers and other devices.
Keywords
Atom lasers; Atomic beams; DH-HEMTs; Fiber lasers; Gallium arsenide; Laboratories; Laser modes; Optical device fabrication; Threshold current; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188930
Filename
1478291
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