Title :
Complementary DMOS process for LSI
Author :
Masuhara, Toshiaki ; Muller, R.S. ; Muller, Richard S.
Author_Institution :
Hitachi Central Research Laboratory, Tokyo, Japan
Abstract :
Through the application of diffused MOS (DMOS) transistors to the design of complementary MOS circuits, a CMOS process that is simpler and denser than that presently used has been designed and demonstrated. Test circuits using 1 ohm. cm n-type
Keywords :
Boron; CMOS technology; Circuit testing; Doping; Electronic equipment testing; Inverters; Laboratories; Large scale integration; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188943
