DocumentCode
3554068
Title
Vertical injection logic
Author
Nakano, T. ; Horiba, Y. ; Yasuoka, A. ; Tomisawa, O. ; Murakami, K. ; Kato, S.
Author_Institution
Mitsubishi Electric Corporation, Hyogo, Japan
Volume
21
fYear
1975
fDate
1975
Firstpage
555
Lastpage
558
Abstract
A novel structure, Vertical Injection Logic (VIL) is proposed for getting a superior power-delay product. VIL has a device structure in which PNP transistor is arranged vertically below NPN transistor to obtain the narrow base width by two diffusion steps. The current gain of the PNP device described increases to almost 0.9 in comparison with 0.4 of the usual one. The experimental results show a minimum stage delay of 8.8 ns and a power-delay product of 0.07 pJ compared to 37 ns and 0.3 pJ for the usual I2L device.
Keywords
Conductivity; Current measurement; Delay effects; Electric variables; Epitaxial layers; Gain measurement; Inverters; Logic devices; Propagation delay; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188946
Filename
1478307
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