• DocumentCode
    3554081
  • Title

    Cd-diffused Pb1-xSnxTe lasers with high output power

  • Author

    Lo, Wayne

  • Author_Institution
    Research Laboratories, General Motors Corporation, Warren, MI
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    604
  • Lastpage
    606
  • Abstract
    Cd-diffused Pb1-xSnxTe diode lasers have been fabricated with cw output powers of 1.25 mW (single-mode) and 2.4 mW (total) at 10.6 µm. These power levels are attributed to: the low-temperature Cd-diffusion, a new method of growing low dislocation density crystals and to contact resistance as low as 3\\times10^{-5} -cm2. For the first time in Pb1-xSnxTe homojunction lasers the onset of lasing was observed in diode I-V measurements. Multi-mode emission spectra are common for cw operation, but reducing the cavity width encourages single-mode emission, indicating the filamentary nature of modes in these devices.
  • Keywords
    Contact resistance; Crystals; Diode lasers; Electrical resistance measurement; Grain boundaries; Laboratories; Laser modes; Microscopy; Power generation; Power lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188958
  • Filename
    1478319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554081