Ion implanted GaAs enhancement mode JFET´s

The objective of this investigation was to fabricate various types of enhancement mode GaAs junction field-effect transistors (JFET) utilising ion implantation and to explore their electrical characteristics. A promising application of enhancement mode GaAs JFET´s to high speed, low power, radiation hardened integrated circuits has been established (1). Although the present ion implanted devices are not optimised with respect to electrical performance, it is demonstrated that ion implantation can replace epitaxy and diffusion of the standard fabrication technique. Inherent to ion implantation is precise control of impurity concentration, depth and profile, thus leading to integrated circuit fabrication with improved yield figures over large wafer areas.