Hydrogen sensitive MOS structures

It is shown that hydrogen in the ambient atmosphere changes the flatband voltage of palladium gate MOS-structures. The physical mechanisms behind this phenomenon are discussed. Experimental results on the detection of hydrogen in air, argon and nitrogen are given. It is shown that the rate constants of chemical reactions on the Pd-surface are obtained from such experiments. The detection of hydrogen in hydrogen compounds like ammonia and of hydrogen in smoke is also demonstrated. Internal photoemission experiments, which support the results on the flatband voltage changes of MOS-structures, are briefly discussed.