Title :
Chemically sensitive semiconductor devices
Author_Institution :
University of Pennsylvania, Philadelphia, Pennsylvania
Abstract :
The model equations for the response of MOSFET, Schottky barrier and heterojunction diodes to chemical stimuli are derived. It is shown that diode structures have intrinsic advantages over MOSFET´s because of the form of the response relations.
Keywords :
Atomic layer deposition; Chemicals; Electrostatics; Equations; Heterojunctions; MOSFET circuits; Schottky barriers; Schottky diodes; Semiconductor devices; Semiconductor diodes;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188967
