DocumentCode
3554091
Title
Chemically sensitive semiconductor devices
Author
Zemel, J.N.
Author_Institution
University of Pennsylvania, Philadelphia, Pennsylvania
Volume
21
fYear
1975
fDate
1975
Firstpage
635
Lastpage
638
Abstract
The model equations for the response of MOSFET, Schottky barrier and heterojunction diodes to chemical stimuli are derived. It is shown that diode structures have intrinsic advantages over MOSFET´s because of the form of the response relations.
Keywords
Atomic layer deposition; Chemicals; Electrostatics; Equations; Heterojunctions; MOSFET circuits; Schottky barriers; Schottky diodes; Semiconductor devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188967
Filename
1478328
Link To Document