Emission and Detection of Terahertz Radiation Using Two-Dimensional Electrons in III–V Semiconductors and Graphene

Author

Otsuji, Taiichi ; Watanabe, Toshio ; Boubanga Tombet, S.A. ; Satou, Akira ; Knap, W.M. ; Popov, V.V. ; Ryzhii, Maxim ; Ryzhii, Victor

Author_Institution

RIEC: Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

Volume

3

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

63

Lastpage

71

Abstract

Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III-V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author´s original asymmetrically interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting peculiar carrier transport and optical properties owing to massless and gapless energy spectrum. Theoretical and experimental studies toward the creation of graphene terahertz injection lasers are described.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; graphene; high electron mobility transistors; indium compounds; molecular electronics; solid lasers; terahertz wave detectors; terahertz waves; 2D electron systems; 2D plasmon resonance; C; III-V semiconductors; InAlAs-InGaAs-InP; InAlAs-InGaAs-InP material system; InGaP-InGaAs-GaAs; InGaP-InGaAs-GaAs material system; asymmetrically interdigitated dual-grating gates; carrier transport; device structure; gapless energy spectrum; graphene terahertz injection laser creation; high-electron mobility transistor; intense broadband terahertz detection; intense broadband terahertz emission; massless energy spectrum; monolayer carbon-atomic honeycomb lattice crystal; optical properties; terahertz radiation detection; terahertz radiation emission; Cavity resonators; Graphene; HEMTs; Logic gates; MODFETs; Plasmons; Temperature measurement; Compound semiconductors; detectors; graphene; lasers; plasmons; terahertz (THz);

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2012.2235911

Filename

6423871