• DocumentCode
    3554138
  • Title

    Characterization of silicon MOS tunnel diodes

  • Author

    Kar, S.

  • Author_Institution
    Indian Institute of Technology, Kanpur, India
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    79
  • Lastpage
    83
  • Keywords
    Capacitance measurement; Capacitance-voltage characteristics; Charge carrier lifetime; Current measurement; Density measurement; Energy measurement; Photovoltaic cells; Schottky diodes; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.188990
  • Filename
    1478702
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554138