Exciton transfer among interface islands in growth-interrupted single quantum wells

Author

Luo, C.P. ; Chin, M.K. ; Xu, S.J. ; Chua, S.J.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

fYear

1996

fDate

7-7 June 1996

Firstpage

54

Lastpage

55

Abstract

Summary form only given. Photoluminescence measurements within the temperature range 4.1-155 K are made on five spatially separated GaAs-GaAlAs single quantum wells, with nominal widths of 4, 6, 11, 19, and 25 monolayers, and with growth interruption of 90 seconds at each interface. The excitation power is 5 mW of Ar/sup +/ laser.

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; low-temperature techniques; monolayers; photoluminescence; semiconductor growth; semiconductor quantum wells; semiconductor thin films; 4.1 to 155 K; 5 mW; 90 s; Ar; Ar/sup +/ laser; GaAs-GaAlAs; excitation power; exciton transfer; five spatially separated GaAs-GaAlAs single quantum wells; growth interruption; growth-interrupted single quantum wells; interface islands; monolayers; nominal widths; photoluminescence measurements; temperature range; Argon; Electric variables measurement; Excitons; Gallium arsenide; Laboratories; Phonons; Photoluminescence; Photonics; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865563