Title :
A new operation mode "Surfing mode" in high-low-type GaAs IMPATTs
Author :
Hirachi, Y. ; Kobayashi, K. ; Ogasawara, K. ; Hisatsugu, T. ; Toyama, Y.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
A new operation mode "Surfing mode" is proposed and verified experimentally in high-low-type GaAs IMPATTs. This mode is characterized by the concept that the avalanche charge pulse drifts synchronously with the movement of the front edge of the depletion layer at the higher velocity than the scattering-limited velocity. High- -low-type GaAs IMPATTs designed so as to operate effectively in the "Surfing mode" exhibited output powers 15 watts (ΔTj=210°C) at 6. 1 GHz 25 percent efficiencies.
Keywords :
Admittance measurement; Circuits; Current measurement; Diodes; Gallium arsenide; Laboratories; Power generation; Radio frequency; Scattering; Voltage;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.188995
