DocumentCode :
3554144
Title :
Transient analysis of the TRAPATT mode
Author :
Khochnevis-Rad, M. ; Lomax, R.J. ; Haddad, G.I.
Author_Institution :
University of Michigan, Ann Arbor, MI
Volume :
22
fYear :
1976
fDate :
1976
Firstpage :
106
Lastpage :
109
Abstract :
A computer study of a TRAPATT device-circuit interaction has been performed in the time domain under various conditions of pulse rise time and current density. For a 4.3-ns rise-time pulse at 12,000 A/cm2, a movie will be shown which shows the voltage on the coaxial circuit together with the carrier concentrations and electric field in the diode during the starting transient and for one TRAPATT cycle. These results are not adequately explained by existing theory which indicates that a pulse reflected from the circuit triggers the subsequent cycle. Transient and TRAPATT operation of the p+nn+and n+pp+devices will be discussed and compared.
Keywords :
Capacitors; Circuit simulation; Coaxial components; Diodes; Electron traps; Packaging; Power system transients; Pulse circuits; Transient analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Type :
conf
DOI :
10.1109/IEDM.1976.188996
Filename :
1478708
Link To Document :
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