DocumentCode :
3554149
Title :
Diode sources for 1.0 to 1.2 µm emission
Author :
Nuese, C.J.
Author_Institution :
RCA Laboratories, Princeton, New Jersey
fYear :
1976
fDate :
6-8 Dec. 1976
Firstpage :
125
Lastpage :
128
Abstract :
The properties of silica fibers that are potentially attractive for fiber-optic systems at wavelengths between about 1.0 and 1.2 µm are considered. The features and deficiencies of semiconductor LEDs and lasers that could be used in this wavelength range are then reviewed and compared. These sources include: Si-compensated LEDs of GaAs and InP; ternary homojunctions of (In,Ga)As, In(As,P), and Ga(As,Sb); "pseudo" III-Vs or II-VIs such as CuInSe2and CdSnP2; and heterojunction lasers and LEDs of (In,Ga)As/(In,Ga)P, Ga(As,Sb)/ (Al,Ga)(As,Sb), and (In,Ga)(As,P)/InP.
Keywords :
Fiber lasers; Gallium arsenide; Indium phosphide; Light emitting diodes; Optical attenuators; Optical fibers; Optical materials; Optical refraction; Optical variables control; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Conference_Location :
Washigton, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1976.189000
Filename :
1478712
Link To Document :
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