Title :
The effects of emitter impurity concentration on the high-current gain of silicon NPN power transistors
Author :
Martinelli, Ramon U. ; Jetter, E. ; Jetter, Evelyn
Author_Institution :
RCA Laboratories, Princeton, New Jersey
Abstract :
A reduction of the surface impurity concentration in the emitter from levels beyond 5 × 1020to levels around 5 × 1019cm-3is known to increase the emitter efficiency, and hence, the d.c. gain of bi-polar transistors at low current levels
Keywords :
Current density; Cutoff frequency; Fingers; Impurities; Laboratories; Power transistors; Silicon; Solid state circuits; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.189009
