DocumentCode
3554187
Title
Gallium antimonide planar tunnel diode
Author
Kang, Daniel S. ; Ko, Wen H.
Author_Institution
Texas Instruments Inc., Houston, Texas
Volume
22
fYear
1976
fDate
1976
Firstpage
267
Lastpage
270
Abstract
Novel technology for fabricating gallium antimonide planar tunnel diodes on (III) crystall plane was developed for strain or pressure transducers. Peak current to valley current ratio of eight was obtained routinely and the maximum ratio was about eighteen. The series resistance was between one to five ohms. The fractional peak current change due to the unit strain (gauge factor) was in the range of 180 to 240. The fabrication technology along with the theoretical explanations of the high strain sensitivity is discussed.
Keywords
Capacitive sensors; Diodes; Fabrication; Gallium compounds; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189035
Filename
1478747
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