Title :
Schottky diode magnetic sensor of high sensitiveness
Author :
Kamarinos, Georges ; Viktorovitch, Pierre
Author_Institution :
Institut National Polytechnique, E. N. S. E. R. G. Grenoble Cedex-France
Abstract :
A magnetosensitive device based on the combination of two effects is described: i) the magnetoconcentration effect, ii) the sensitiveness of the reverse saturation current of a Schottky diode to a carrier density excess. The device is fabricated on Germanium slabs and it presents a sensitiveness dV/dB = 25 mV/Gauss[or dV/IdB = 25 V/Gauss A]. This sensitiveness is 200 times higher than that of Hall sensors and larger than that of usual magnetodiodes.
Keywords :
Charge carrier density; Magnetic devices; Magnetic field measurement; Magnetic semiconductors; Magnetic sensors; Magnetic separation; Radiative recombination; Saturation magnetization; Schottky diodes; Slabs;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.189036
