DocumentCode
355419
Title
Electronic excitation-enhanced crystallization of amorphous films
Author
Hyde, S.C.W. ; Barry, N.P. ; French, Paul M. W. ; Solis, Javier ; Afonso, C.N. ; Ballesteros, J.M.
Author_Institution
Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK
fYear
1996
fDate
7-7 June 1996
Firstpage
58
Abstract
Summary form only given. The study of the interaction of ultrashort laser pulses with solids has raised some important questions concerning the nature of the transformations occurring at the material surface in the presence of very strong levels of electronic excitation. Even though the presence of electronic excitation-induced metastable transient phases has been demonstrated in several materials on irradiation with femtosecond laser pulses, the role of electronic excitation in permanent phase transitions is still not fully understood, and different nonthermal effects have been invoked to explain permanent structural changes induced in amorphous Si and Ge on nanosecond and picosecond laser pulse irradiation.
Keywords
crystallisation; high-speed optical techniques; laser beam effects; semiconductor thin films; Ge; Si; amorphous Si; amorphous films; electronic excitation; electronic excitation-enhanced crystallization; electronic excitation-induced metastable transient phases; femtosecond laser pulses; material surface; nanosecond laser pulse irradiation; nonthermal effects; permanent phase transitions; permanent structural changes; picosecond laser pulse irradiation; solids; ultrashort laser pulses; very strong levels; Amorphous materials; Crystalline materials; Crystallization; Laser excitation; Laser transitions; Metastasis; Optical materials; Optical pulses; Solid lasers; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865568
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